Previous close | 40.60 |
Open | 40.60 |
Bid | N/A x N/A |
Ask | N/A x N/A |
Day's range | 40.60 - 40.60 |
52-week range | 40.60 - 40.60 |
Volume | |
Avg. volume | 0 |
Market cap | 301.846B |
Beta (5Y monthly) | 0.85 |
PE ratio (TTM) | 8.44 |
EPS (TTM) | N/A |
Earnings date | N/A |
Forward dividend & yield | N/A (N/A) |
Ex-dividend date | 27 Dec 2023 |
1y target est | N/A |
Advanced Micro Devices, Inc (NASDAQ:AMD) signed a contract with Samsung Electronics (OTC:SSNLF) to supply HBM3E (5th generation high bandwidth memory) valued at approximately $3 billion (4 trillion won for its new data center chip, the MI350. Samsung Electronics has agreed to provide AMD with 12-layer HBM3E DRAM, slated for mass production in the year’s first half. Samsung started supplying samples to customers in February. The deal is worth about $3 billion (KRW 4.134 trillion), Viva 100 report
Earnings preview of key companies reporting next week and what to look out for.
On Tuesday, Samsung Electronics Co (OTC:SSNLF) announced that it has started mass production of the world’s most advanced 286-layer NAND flash memory chips, which offer increased data storage capacity. The company’s ninth-generation 3D NAND memory, which surpasses the 236-layer eighth-generation version by expanding bit density by 50%, will be utilized in artificial intelligence data centers and smartphones, Nikkei Asia reports. U.S. tech companies like Alphabet Inc (NASDAQ:GOOG) (NASDAQ:GOOGL)