Previous close | 0.9000 |
Open | 0.9500 |
Bid | 0.0000 |
Ask | 0.0000 |
Strike | 4.50 |
Expiry date | 2024-12-20 |
Day's range | 0.9000 - 0.9500 |
Contract range | N/A |
Volume | |
Open interest | N/A |
Next-gen GaNFast™ Power ICs Enable Lenovo to Create Efficient, Lightweight, and Sustainable High-Speed GaN Chargers Navitas Drives Lenovo’s Mobile Fast Charger Development Next-gen GaNFast™ Power ICs Enable Lenovo to Create Efficient, Lightweight, and Sustainable High-Speed GaN Chargers TORRANCE, Calif., June 20, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconduct
World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs Navitas’ Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs TORRANCE, Calif., June 06, 2024 (GLOBE NEWSWIRE) -- Navi
Leading international exhibition highlights the latest gallium nitride (GaN) and silicon carbide (SiC) technologies for the safest, most efficient, most reliable power for fast charging, power conversion and storage, motor drive, and more. Navitas Drives High-power, High-reliability, Next-gen Power Semis for AI, EV, Industrial, Solar, and Energy Storage at PCIM 2024 Leading international exhibition highlights the latest gallium nitride (GaN) and silicon carbide (SiC) technologies for the safest,